Title :
Flash EEPROM Cell scaling based on tunnel oxide thinning limitations
Author :
Yosbikawa, K. ; Mori, S. ; Sakagami, E. ; Arai, N. ; Kaneko, Y. ; Ohshima, Y.
Author_Institution :
Toshiba Microelectronics Corporation, Japan
Keywords :
Degradation; EMP radiation effects; EPROM; Insulation; Laboratories; Leakage current; Magnetooptic recording; Microelectronics; Semiconductor devices; Voltage;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.705999
