• DocumentCode
    2013408
  • Title

    Development of p-Pb1-xSnxTe Functionally Graded Materials

  • Author

    Gelbstein, Y. ; Dashevsky, Z. ; George, Y. ; Dariel, M.P.

  • Author_Institution
    Dept. of Mater. Eng., Ren-Gurion Univ. of the Negev, Beer-Sheva
  • fYear
    2006
  • fDate
    6-10 Aug. 2006
  • Firstpage
    418
  • Lastpage
    421
  • Abstract
    Lead tin telluride based compounds are p-type materials for thermoelectric applications, in the 50-600degC temperatures range. The electronic transport properties of PbTe and Pb1-xSnx Te materials are strongly dependent on the processing approach. Powder metallurgy is a suitable approach for functionally graded materials (FGMs) preparation but its effects on the electronic properties have to be carefully checked. Powder metallurgical processing may introduce atomic defects and local strains into the material and, thereby, alter the carrier concentration. Consequently such material may be in non-equilibrium conditions at the operating temperature with unstable thermoelectric properties. This effect can be reduced and eliminated by appropriate annealing procedures. In FGMs, annealing up to the stabilization of the thermoelectric properties is mandatory for achieving the desired carrier concentration profile along the sample. The design procedures of the FGMs, as well as the annealing effects on cold compacted and sintered Pb1-xSnxTe samples are described in details
  • Keywords
    annealing; carrier density; compaction; functionally graded materials; lead compounds; narrow band gap semiconductors; powder metallurgy; sintering; thermoelectricity; 50 to 600 C; PbSnTe; annealing; atomic defects; carrier concentration; cold compaction; electronic transport; functionally graded materials; lead tin telluride; local strains; p-type material; powder metallurgy; sintering; thermoelectricity; Annealing; Capacitive sensors; Displays; Inorganic materials; Lead compounds; Powders; Tellurium; Temperature distribution; Thermoelectricity; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2006. ICT '06. 25th International Conference on
  • Conference_Location
    Vienna
  • ISSN
    1094-2734
  • Print_ISBN
    1-4244-0811-3
  • Electronic_ISBN
    1094-2734
  • Type

    conf

  • DOI
    10.1109/ICT.2006.331304
  • Filename
    4133319