Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements

Author

Brunel, L. ; Malbert, N. ; Curutchet, A. ; Labat, N. ; Lambert, B.

Author_Institution

IMS Lab., Talence, France

fYear

2012

fDate

17-21 Sept. 2012

Firstpage

270

Lastpage

273

Abstract

This study reports on detection and characterization of parasitic effects of AlGaN/GaN HEMTs on SiC substrate. First, experimental conditions impact and temperature effects on static I_DS(V_DS) characteristics are studied between 160 and 390K. Then, dependences on temperature, electric field and integration time of the kink effect are demonstrated with DC and pulsed measurements. Two traps are identified by isothermal drain current transient spectroscopy : an emission process and a capture process with activation energy of 0.58eV and 0.64eV respectively.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; AlGaN-GaN; DC measurement; HEMT; SiC; SiC substrate; VDS; activation energy; capture process; drain current transient measurement; electric field; emission process; isothermal drain current transient spectroscopy; kink effect characterization; parasitic effect; pulsed measurement; static IDS; temperature effect; Current measurement; Gallium nitride; HEMTs; Logic gates; MODFETs; Temperature; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European

Conference_Location

Bordeaux

ISSN

1930-8876

Print_ISBN

978-1-4673-1707-8

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2012.6343385

Filename

6343385