Title :
Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements
Author :
Brunel, L. ; Malbert, N. ; Curutchet, A. ; Labat, N. ; Lambert, B.
Author_Institution :
IMS Lab., Talence, France
Abstract :
This study reports on detection and characterization of parasitic effects of AlGaN/GaN HEMTs on SiC substrate. First, experimental conditions impact and temperature effects on static IDS(VDS) characteristics are studied between 160 and 390K. Then, dependences on temperature, electric field and integration time of the kink effect are demonstrated with DC and pulsed measurements. Two traps are identified by isothermal drain current transient spectroscopy : an emission process and a capture process with activation energy of 0.58eV and 0.64eV respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; AlGaN-GaN; DC measurement; HEMT; SiC; SiC substrate; VDS; activation energy; capture process; drain current transient measurement; electric field; emission process; isothermal drain current transient spectroscopy; kink effect characterization; parasitic effect; pulsed measurement; static IDS; temperature effect; Current measurement; Gallium nitride; HEMTs; Logic gates; MODFETs; Temperature; Temperature measurement;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-1707-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2012.6343385
