Title :
Room temperature operation of patterned InGaAs quantum dot lasers fabricated by electron beats lithography and selective area epitaxy
Author :
Elarde, V.C. ; Rangarajan, R. ; Borchardt, J.J. ; Coleman, J.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
This work presents the first room temperature operation of GaAs based ridge waveguide semiconductor lasers containing lithographically defined InGaAs quantum dots as the active region. Semiconductor laser fabrication by electron beam lithography and selective growth epitaxy are also demonstrated.
Keywords :
III-V semiconductors; electron beam lithography; gallium arsenide; indium compounds; optical fabrication; quantum dot lasers; semiconductor epitaxial layers; waveguide lasers; 20 degC; GaAs based lasers; InGaAs-GaAs; electron beam lithography; electron beats lithography; lithographically defined quantum dots; patterned InGaAs; quantum dot lasers; ridge waveguide lasers; room temperature operation; selective area epitaxy; semiconductor laser fabrication; semiconductor lasers; Electrons; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Lithography; Quantum dot lasers; Semiconductor lasers; Semiconductor waveguides; Temperature; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363112
