Room temperature operation of patterned InGaAs quantum dot lasers fabricated by electron beats lithography and selective area epitaxy

Author

Elarde, V.C. ; Rangarajan, R. ; Borchardt, J.J. ; Coleman, J.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

1

fYear

2004

fDate

7-11 Nov. 2004

Firstpage

65

Abstract

This work presents the first room temperature operation of GaAs based ridge waveguide semiconductor lasers containing lithographically defined InGaAs quantum dots as the active region. Semiconductor laser fabrication by electron beam lithography and selective growth epitaxy are also demonstrated.

Keywords

III-V semiconductors; electron beam lithography; gallium arsenide; indium compounds; optical fabrication; quantum dot lasers; semiconductor epitaxial layers; waveguide lasers; 20 degC; GaAs based lasers; InGaAs-GaAs; electron beam lithography; electron beats lithography; lithographically defined quantum dots; patterned InGaAs; quantum dot lasers; ridge waveguide lasers; room temperature operation; selective area epitaxy; semiconductor laser fabrication; semiconductor lasers; Electrons; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Lithography; Quantum dot lasers; Semiconductor lasers; Semiconductor waveguides; Temperature; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE

Print_ISBN

0-7803-8557-8

Type

conf

DOI

10.1109/LEOS.2004.1363112

Filename

1363112