• DocumentCode
    2013466
  • Title

    Site- and energy-controlled quantum dots for photonic applications

  • Author

    Kapon, Eli

  • Author_Institution
    Lab. of Phys. Nanostructures, Swiss Fed. Inst. of Technol., Lausanne, Switzerland
  • Volume
    1
  • fYear
    2004
  • fDate
    7-11 Nov. 2004
  • Firstpage
    67
  • Abstract
    This paper reviews the application of growth on nonplanar, patterned substrates for producing high quality semiconductor quantum dots (QDs) with good control over their position on the substrate as well as their energy spectrum. The approach consists of organometallic chemical vapor deposition (OMCVD) of (In)GaAs/(Al)GaAs heterostructures on (111)B GaAs substrates patterned with pyramidal pits. The perfect site-control of the pyramidal quantum dots are useful for incorporation into optically active photonic crystal devices. The incorporation of pyramidal QDs into Bragg optical cavities as well as their use in efficient QD lasers are also discussed.
  • Keywords
    MOCVD; photonic crystals; quantum dot lasers; semiconductor growth; semiconductor quantum dots; (In)GaAs/(Al)GaAs heterostructures; Bragg optical cavities; GaAs; GaAs substrates; InGaAs-AlGaAs; energy spectrum; energy-controlled quantum dots; nonplanar substrates; optically active photonic crystal devices; organometallic chemical vapor deposition; patterned substrates; photonic applications; pyramidal quantum dots; pyramidal slits; quantum dot lasers; semiconductor quantum dots; site-controlled quantum dots; Carrier confinement; Charge carriers; Excitons; Light emitting diodes; Photonic crystals; Quantum dots; Stimulated emission; Substrates; Temperature measurement; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-8557-8
  • Type

    conf

  • DOI
    10.1109/LEOS.2004.1363113
  • Filename
    1363113