Title :
Analysis of the effect of cell parameters on the maximum RRAM array size considering both read and write
Author :
Zhang, Leqi ; Cosemans, Stefan ; Wouters, Dirk J. ; Groeseneken, Guido ; Jurczak, Malgorzata
Author_Institution :
imec, Leuven, Belgium
Abstract :
A numerical framework is developed to analyze the requirements of Self-Rectifying Resistive RAM cells for using in cross-point arrays. This paper analyzes the relation between maximum array size and cell characteristics, such as non-linearity, absolute current level and on/off ratio. Furthermore, optimal bias conditions are determined, and the advantage compared to a standard ½ voltage bias scheme is discussed.
Keywords :
random-access storage; cell parameter; cross-point array; maximum RRAM array size; numerical framework; self-rectifying resistive RAM cell; Arrays; Flash memory; Leakage current; Linearity; Microprocessors; Random access memory;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-1707-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2012.6343388
