DocumentCode :
2013516
Title :
Study of dark counts in Geiger mode In0.53Ga0.47As/In0.52Al0.48As SACM APDs
Author :
Karve, Gauri ; Wang, Shuhui ; Ma, Fa-Jun ; Li, Xin ; Campbell, Joe C. ; Bethune, Donald S. ; Risk, William P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Volume :
1
fYear :
2004
fDate :
7-11 Nov. 2004
Firstpage :
72
Abstract :
This study demonstrates 1.52 μm Geiger mode operation of an In0.53Ga0.47As/In0.52Al0.48As APD. A study of the origin of dark count rate in this detector is also presented.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; photon counting; 1.52 mum; Geiger mode; In0.53Ga0.47As-In0.52Al0.48As; SACM APD; dark counts; photon counting detector; separate-absorption-charge multiplication; Avalanche photodiodes; Breakdown voltage; Electric breakdown; Indium gallium arsenide; Indium phosphide; Optical noise; Photonic band gap; Probability; Temperature dependence; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
Type :
conf
DOI :
10.1109/LEOS.2004.1363116
Filename :
1363116
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2013516
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