Title :
The study for photo-thermoelectric effect of Si-Ge-Au amorphous thin films as non-cooled type photo sensor
Author :
Okamoto, Y. ; Fukui, K. ; Fujii, K. ; Suenaga, T. ; Morimoto, J.
Author_Institution :
Dept. of Mater. Sci. & Eng., National Defense Acad., Yokosuka
Abstract :
We have examined the feasibility for photo sensor application of Si-Ge-Au amorphous thin films. It is clarified the optimum sample preparation condition for photo sensor application. Photo sensing properties of optimum prepared samples were measured. As a result, specific sensitivity reached up to 0.019 V/W as row material. This value means that Si-Ge-Au amorphous thin film is powerful candidate for primary material of photo-thermoelectric type photo sensor
Keywords :
amorphous semiconductors; germanium compounds; gold compounds; photodetectors; photoelectricity; photothermal effects; semiconductor thin films; silicon compounds; thermoelectricity; Si-Ge-Au; amorphous thin films; photo sensor; photo-thermoelectric effect; Amorphous materials; Chemical analysis; Electromagnetic wave absorption; Infrared sensors; Temperature sensors; Thermal conductivity; Thermal sensors; Thermoelectricity; Thin film sensors; Transistors;
Conference_Titel :
Thermoelectrics, 2006. ICT '06. 25th International Conference on
Conference_Location :
Vienna
Print_ISBN :
1-4244-0811-3
Electronic_ISBN :
1094-2734
DOI :
10.1109/ICT.2006.331306
