DocumentCode
2013562
Title
Transport properties of strained silicon nanowires
Author
Niquet, Yann-Michel ; Delerue, Christophe ; Nguyen, Viet Hung ; Krzeminski, Christophe ; Triozon, François
Author_Institution
SP2M, UJF-Grenoble 1, Grenoble, France
fYear
2012
fDate
17-21 Sept. 2012
Firstpage
290
Lastpage
293
Abstract
We discuss the effect of strains on the electron and hole mobilities in silicon nanowires with diameters near 10 nm. We show that silicon nanowires are very sensitive to strains, so that strain engineering shall be a highly efficient booster for nanowire technologies.
Keywords
electron mobility; elemental semiconductors; hole mobility; nanowires; silicon; Si; electron mobility; hole mobility; nanowire technology; strain engineering; strained silicon nanowire; transport property; Electron mobility; Nanowires; Silicon; Strain; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location
Bordeaux
ISSN
1930-8876
Print_ISBN
978-1-4673-1707-8
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2012.6343390
Filename
6343390
Link To Document