DocumentCode :
2013730
Title :
Deterministic simulation of 3D and quasi-2D electron and hole systems in SiGe devices
Author :
Jungemann, C. ; Anh-Tuan Pham ; Sung-Min Hong ; Meinerzhagen, B.
Author_Institution :
Dept. of Electromagn. Theor., RWTH Aachen Univ., Aachen, Germany
fYear :
2012
fDate :
17-21 Sept. 2012
Firstpage :
318
Lastpage :
321
Abstract :
We present examples of deterministic solvers for the Boltzmann transport equation for electrons and holes in a 3D and quasi 2D fc-space. Compared to the standard approach, the Monte Carlo method, these deterministic solvers have certain advantages. They yield exact stationary solutions, which, for example, are required for the simulation of the floating body effect in SOI devices. They allow exact small-signal and noise analysis in the whole range of frequencies from 0 to THz. Inclusion of magnetic fields, the Pauli principle or rare events causes no problems. On the other hand, the deterministic solvers are more memory intensive and more difficult to code than the Monte Carlo method.
Keywords :
Boltzmann equation; Ge-Si alloys; Monte Carlo methods; Poisson equation; electron transport theory; semiconductor device models; silicon-on-insulator; 3D electron; Boltzmann transport equation; Monte Carlo method; Pauli principle; SOI devices; SiGe; deterministic simulation; deterministic solvers; floating body effect; hole systems; magnetic fields; memory intensive; noise analysis; quasi-2D electron; rare events; small-signal analysis; stationary solutions; Boltzmann equation; Harmonic analysis; Mathematical model; Monte Carlo methods; Noise; Numerical models; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location :
Bordeaux
ISSN :
1930-8876
Print_ISBN :
978-1-4673-1707-8
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2012.6343397
Filename :
6343397
Link To Document :
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