Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs

This paper discusses the low-frequency noise behavior of SiGe-channel bulk FinFETs processed on (100) and (110) Si wafers. A comparison is also made with planar SiGe-channel pMOSFETs. It is shown that for devices with carriers confined in the quantum well, only 1/f noise is observed, dominated by mobility fluctuations. Surprisingly, SiGe pMOSFETs fabricated on (110) Si wafers exhibit the highest mobility but also the highest 1/f noise, corresponding with trapping/detrapping. This is also consistent with the density of interface traps extracted from charge pumping measurements.