Anisotropic Scattering in the (Bi, Sb)2 (Te, Se, S)3 Solid Solutions

Author

Lukyanova, L.N. ; Kutasov, V.A. ; Popov, V.V. ; Konstantinov, P.P. ; Fedorov, M.I.

Author_Institution

Ioffe Phys.-Tech. Inst., Russian Acad. of Sci., St. Petersburg

fYear

2006

fDate

6-10 Aug. 2006

Firstpage

496

Lastpage

500

Abstract

Analysis of thermoelectric and galvanomagnetic properties is carried out for solid solutions (Bi, Sb)²(Te, Se, S)³ with various substitutions of atoms in sublattices of basic Bi ₂Te₃ compound. The increase in thermoelectric figure of merit Z is observed in the compositions with a weak anisotropy of charge carriers in mirror plane. In addition, relaxation time tensor component along trigonal direction (tau₃₃), which is perpendicular to a direction of crystal growth, decreases in comparison with components along binary (tau₁₁) and bisector (tau ₁₁) directions

Keywords

antimony compounds; bismuth compounds; carrier relaxation time; galvanomagnetic effects; selenium compounds; solid solutions; tellurium compounds; thermoelectricity; (BiSb)₂(TeSeS)₃; anisotropic scattering; charge carriers; crystal growth; galvanomagnetic property; relaxation time tensor component; solid solutions; thermoelectric merit figure; thermoelectric property; Anisotropic magnetoresistance; Bismuth; Charge carriers; Lattices; Scattering; Solids; Tellurium; Temperature; Thermal conductivity; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2006. ICT '06. 25th International Conference on

Conference_Location

Vienna

ISSN

1094-2734

Print_ISBN

1-4244-0811-3

Electronic_ISBN

1094-2734

Type

conf

DOI

10.1109/ICT.2006.331342

Filename

4133339