• DocumentCode
    2014207
  • Title

    Automotive power integrated circuit processes

  • Author

    Latham, Lawrence F.

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    1989
  • fDate
    28-29 Aug 1989
  • Firstpage
    106
  • Lastpage
    108
  • Abstract
    Power integrated circuit (IC) processes are discussed with an emphasis on a bipolar power IC process developed by Texas Instruments. This power technology offers advantages in ruggedness, flexibility, and cost over other processes. The power device closely resembles a conventional single diffused bipolar power transistor. A comparison of safe operating area characteristics of several current power IC technologies is given to demonstrate the advantage of bulk epitaxial devices over the more common power IC surface device types. The rugged N-P-N bipolar output transistors are capable of delivering high current (in excess of 20 A) and high voltage (up to 500 V) simultaneously
  • Keywords
    automotive electronics; bipolar integrated circuits; power integrated circuits; Texas Instruments; automotive electronics; bipolar power IC process; cost; flexibility; power integrated circuit processes; ruggedness; safe operating area characteristics; Automotive engineering; CMOS logic circuits; CMOS process; CMOS technology; Costs; Instruments; Integrated circuit technology; Power integrated circuits; Power transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Automotive Power Electronics, 1989
  • Conference_Location
    Dearborn, MI
  • Type

    conf

  • DOI
    10.1109/APE.1989.97165
  • Filename
    97165