DocumentCode
2014207
Title
Automotive power integrated circuit processes
Author
Latham, Lawrence F.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1989
fDate
28-29 Aug 1989
Firstpage
106
Lastpage
108
Abstract
Power integrated circuit (IC) processes are discussed with an emphasis on a bipolar power IC process developed by Texas Instruments. This power technology offers advantages in ruggedness, flexibility, and cost over other processes. The power device closely resembles a conventional single diffused bipolar power transistor. A comparison of safe operating area characteristics of several current power IC technologies is given to demonstrate the advantage of bulk epitaxial devices over the more common power IC surface device types. The rugged N-P-N bipolar output transistors are capable of delivering high current (in excess of 20 A) and high voltage (up to 500 V) simultaneously
Keywords
automotive electronics; bipolar integrated circuits; power integrated circuits; Texas Instruments; automotive electronics; bipolar power IC process; cost; flexibility; power integrated circuit processes; ruggedness; safe operating area characteristics; Automotive engineering; CMOS logic circuits; CMOS process; CMOS technology; Costs; Instruments; Integrated circuit technology; Power integrated circuits; Power transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Automotive Power Electronics, 1989
Conference_Location
Dearborn, MI
Type
conf
DOI
10.1109/APE.1989.97165
Filename
97165
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