• DocumentCode
    2014271
  • Title

    Dilute nitride lasers and photodetectors

  • Author

    Harris, J.S., Jr.

  • Author_Institution
    Solid State & Photonics Lab., Stanford Univ., CA, USA
  • fYear
    2006
  • fDate
    5-10 March 2006
  • Abstract
    Dilute nitride alloys are attractive candidates for lasers and detectors between 1.25 and 1.6 μm. We have demonstrated the first low-threshold continuous-wave 1.55 μ GaAs-based lasers and the first > 1.5 μm monolithic VCSELs using GaInNAsSb quantum wells as the active region and photodetectors based upon similar alloys.
  • Keywords
    gallium compounds; indium compounds; photodetectors; quantum well lasers; surface emitting lasers; wide band gap semiconductors; 1.25 to 1.6 mum; GaInNAsSb; GaInNAsSb quantum wells; VCSEL; dilute nitride lasers; dilute nitride photodetectors; Costs; Fiber lasers; Gallium arsenide; Photodetectors; Photonic band gap; Quantum well lasers; Semiconductor lasers; Spine; Surface emitting lasers; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication Conference, 2006 and the 2006 National Fiber Optic Engineers Conference. OFC 2006
  • Print_ISBN
    1-55752-803-9
  • Type

    conf

  • DOI
    10.1109/OFC.2006.215770
  • Filename
    1636801