• DocumentCode
    2014306
  • Title

    Low-threshold CW 1.55-μm GaAs-based lasers

  • Author

    Bank, S.R. ; Bae, H.P. ; Yuen, H.B. ; Goddard, L.L. ; Wistey, M.A. ; Sarmiento, T. ; Harris, J.S., Jr.

  • Author_Institution
    Solid State & Photonics Lab., Stanford Univ., CA, USA
  • fYear
    2006
  • fDate
    5-10 March 2006
  • Abstract
    We demonstrate the first low-threshold continuous-wave (CW) 1.55-μm GaAs-based lasers. Using a single GaInNAsSb quantum well as the active region, edge-emitting lasers yielded CW thresholds as low as 579 A/cm2 (550 A/cm2 pulsed) and output powers > 100 mW.
  • Keywords
    III-V semiconductors; gallium arsenide; optical communication equipment; quantum well lasers; 1.55 mum; CW thresholds; GaAs-based lasers; GaInNAsSb; edge-emitting lasers; Gallium arsenide; Gold; Molecular beam epitaxial growth; Nitrogen; Optical device fabrication; Plasma temperature; Power generation; Thermal management; Thermal resistance; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication Conference, 2006 and the 2006 National Fiber Optic Engineers Conference. OFC 2006
  • Print_ISBN
    1-55752-803-9
  • Type

    conf

  • DOI
    10.1109/OFC.2006.215771
  • Filename
    1636802
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2014306