Title :
Waveguide structure for ultrafast photonic devices utilizing intersubband absorption in GaN-based MOVPE-grown multiple quantum wells
Author :
Kumtornkittikul, C. ; Waki, Ichitaro ; Li, Ning ; Otani, Hiroshi ; Sugiyama, Masakazu ; Nakano, Yoshiaki
Author_Institution :
Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan
Abstract :
We propose waveguide structures for ultrafast optical devices utilizing intersubband absorption in GaN-based multiple quantum wells grown with metalorganic vapor phase epitaxy. The proposed structure can efficiently enhance absorption in the GaN/AlN MQW structure suitable for device fabrication.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; high-speed optical techniques; optical waveguides; quantum well devices; semiconductor quantum wells; vapour phase epitaxial growth; GaN-AlN; GaN-based quantum wells; MOVPE-grown quantum wells; device fabrication; intersubband absorption; metalorganic vapor phase epitaxy; multiple quantum wells; ultrafast optical devices; ultrafast photonic devices; waveguide structure; Absorption; Epitaxial growth; Gallium nitride; Optical device fabrication; Optical devices; Optical refraction; Optical variables control; Optical waveguides; Quantum well devices; Refractive index;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363150
