Title :
Influence of temperature and humidity on resistance and permittivity of composite films of WO3 and B2O3 with fullerene
Author :
Dudnik, Alexander I. ; Bogdanova, A.V.
Author_Institution :
Siberian Branch, L.V. Kirenskiy Inst. of Phys., RAS, Krasnoyarsk, Russia
fDate :
June 30 2010-July 4 2010
Abstract :
The paper represents dependences of electrical resistance on irradiance and temperature for composite fullerene-WO3 films. It has been shown that the structure film-contacts is more sensitive to external influence when the film is placed between contacts. Dependencies of fullerene doped B2O3 films permittivity on temperature and humidity are given. Introduction of fullerenes results in approximately linear temperature dependence of permittivity.
Keywords :
boron compounds; composite materials; contact resistance; electrical resistivity; fullerenes; humidity; permittivity; semiconductor doping; semiconductor materials; semiconductor thin films; tungsten compounds; WO3-B2O3:C60C70; composite fullerene films; composite semiconductor properties; contact resistance; doped films; electrical resistivity; humidity; intrinsic n-type semiconductor; permittivity; Argon; Nanostructures; Permittivity; Physics; B2O3; WO3; composite; fullerene;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-6626-9
DOI :
10.1109/EDM.2010.5568647
