DocumentCode :
2014664
Title :
Observations in ZnO thin films based pressure sensors
Author :
Al Ahmad, Mahmoud ; Al Taradeh, Nedal
Author_Institution :
Electr. Eng. Dept., UAE Univ., Al Ain, United Arab Emirates
fYear :
2015
fDate :
1-4 Feb. 2015
Firstpage :
1
Lastpage :
5
Abstract :
Recently real time monitoring systems of pressure variations has received noticeable interest. This work highlights some important issues and summaries several observations in published Zinc Oxide (ZnO) thin films based pressure sensor (TFPS) structures. New models for IV curve, pressure-output voltage variations have been developed based on empirical observations. In addition, the relations between the capacitance, sensitivity and resistance versus pressure variations have been modeled with noticeable agreements between evaluated and experimental results.
Keywords :
II-VI semiconductors; capacitance; pressure sensors; semiconductor thin films; thin film sensors; thin film transistors; zinc compounds; I-V curve; TFT pressure sensor; ZnO; capacitance; pressure-output voltage variations; resistance-pressure variations; sensitivity; zinc oxide thin films; Equations; Fitting; Logic gates; Mathematical model; Sensors; Thin film transistors; Zinc oxide; Characterizations; ZnO; design rules; materials parameters; piezoelectricity; thin films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
GCC Conference and Exhibition (GCCCE), 2015 IEEE 8th
Conference_Location :
Muscat
Type :
conf
DOI :
10.1109/IEEEGCC.2015.7060040
Filename :
7060040
Link To Document :
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