Two-stage laser-induced-intermixing process for passive and active integration in InGaAs/InGaAsP heterostructures

Author

Tang, Jiansheng ; Zhang, Pingke ; Tang, Pingsheng ; Bhatranand, Apichai

Author_Institution

Dept. of Math. & Phys., Hunan No. 1 Normal Coll., China

Volume

1

fYear

2004

fDate

7-11 Nov. 2004

Firstpage

165

Abstract

A novel two-stage laser-induced quantum well intermixing process has been developed in InGaAs/InGaAsP heterostructures. Based on the process, a maximum wavelength shift of 170 nm was observed. Low-loss intermixed waveguides were demonstrated at 1.55 μm.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser materials processing; optical fabrication; optical losses; optical waveguides; semiconductor quantum wells; spectral line shift; 1.55 mum; InGaAs-InGaAsP; InGaAs/InGaAsP heterostructures; active integration; intermixed waveguides; laser-induced-intermixing; low-loss waveguides; passive integration; quantum well intermixing; two-stage intermixing; wavelength shift; Indium gallium arsenide; Indium phosphide; Integrated circuit technology; Laser theory; Photonic integrated circuits; Quantum well lasers; Semiconductor impurities; Semiconductor lasers; Semiconductor materials; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE

Print_ISBN

0-7803-8557-8

Type

conf

DOI

10.1109/LEOS.2004.1363162

Filename

1363162