Title :
Nanoscale Si/SiO2 double-barrier structures produced by plasma-chemical technology
Author :
Gismatulin, Andrey A. ; Kamaev, Genadii N. ; Antonenko, Alexander Kh ; Arzhannikova, Sofia A. ; Efremov, Mikhail D. ; Gileva, Anna S.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
fDate :
June 30 2010-July 4 2010
Abstract :
SiSiO2 double-barrier structures with ultrathin nanoscale layers were developed by using α-Si:H thin film depositions and subsequently plasma enhanced oxidation. The experimental equipment with source of wide aperture and high-density inductively coupled RF plasma (ICP) was used. The electrical properties of the manufactured MOS-structures were investigated through measurement of C-V and I-V characteristics. In the experiments we observed the charge effects related to the process of carrier transport through thin dielectric. Furthermore, the areas of differential negative resistance in I-V characteristics were detected. These structures can be used as resonant tunneling diodes.
Keywords :
MIS structures; Schottky barriers; carrier mobility; elemental semiconductors; nanofabrication; nanostructured materials; negative resistance; oxidation; plasma materials processing; silicon; silicon compounds; silicon-on-insulator; C-V characteristics; I-V characteristics; MOS-structures; Si-SiO2; carrier transport; dielectric thin films; differential negative resistance; electrical properties; inductively coupled RF plasma; nanofabrication; nanoscale double-barrier structures; plasma enhanced oxidation; resonant tunneling diodes; Dielectrics; Lead; Magnetic tunneling; Nanostructures; Plasma measurements; Plasmas; Nanoscale Si-SiO2 layers; capacitance-voltage characteristics; current-voltage characteristics; double-barrier structure; effect of resonant tunneling;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-6626-9
DOI :
10.1109/EDM.2010.5568651
