Charge state of SOI nanowire sensors

Author

Malyarenko, Nikolai F. ; Naumova, Olga V. ; Zhanaev, Erdem D. ; Popov, Vladimir P.

Author_Institution

Novosibirsk State Tech. Univ., Novosibirsk, Russia

fYear

2010

fDate

June 30 2010-July 4 2010

Firstpage

90

Lastpage

93

Abstract

The initial charge state of SOI nanowire sensors after their long storage in air ambient has been identified by measuring the drain-gate characteristics of SOI nanowire transistors. In the examined structures, the density of the surface charge was found to be ranging within the interval 2×10¹²-4×10¹² cm^-2. Two surface treatments were given to the samples to clean the surface of SOI nanowire sensors from contaminations; among these treatments an optimal one was chosen enabling stabilization of the charge state of the sensor surface. The value of the surface charge in sensors immersed in buffer solutions with different pH values was measured.

Keywords

charge measurement; nanosensors; nanowires; silicon-on-insulator; surface treatment; transistors; SOI nanowire sensor; SOI nanowire transistor; Si; charge state; drain-gate characteristic measurement; pH value; silicon-on-insulator structure; surface charge density; surface treatment; Atmospheric measurements; Digital video broadcasting; Logic gates; Particle measurements; Pollution measurement; Surface treatment; Three dimensional displays; SOI nanowire sensors; pH value; surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-6626-9

Type

conf

DOI

10.1109/EDM.2010.5568652

Filename

5568652