• DocumentCode
    2014782
  • Title

    Statistical approach for the ensemble of quantum dots on GaAs(001)

  • Author

    Lyamkina, Anna A. ; Dmitriev, Dmitriy V. ; Moshchenko, Sergey P. ; Galitsyn, Yury G. ; Toropov, Alexander I.

  • Author_Institution
    Novosibirsk State Univ., Novosibirsk, Russia
  • fYear
    2010
  • fDate
    June 30 2010-July 4 2010
  • Firstpage
    87
  • Lastpage
    89
  • Abstract
    It is shown that Stranski-Krastanov transition, i. e. the change of the growth mode from 2D to 3D in the formation of InAs quantum dots on (001) GaAs is actually a two-dimensional phase transition in the lattice-gas model. The density of lattice gas in quantum dots ensemble changes abruptly from low to high value corresponding to the liquid of quantum dots. The lateral interaction has a decisive role in the phase transition; its parameters are defined. In spite of repulsive direct pair potential of quantum dots interaction the indirect interaction leads to effective attraction between the quantum dots, which results in their condensation.
  • Keywords
    III-V semiconductors; indium compounds; lattice gas; nanofabrication; nanostructured materials; self-assembly; semiconductor growth; semiconductor quantum dots; solid-state phase transformations; GaAs; InAs; Stranski-Krastanov transition; lattice-gas model; quantum dot ensemble; self-assembled nanostructures; two-dimensional phase transition; Films; Nanobioscience; Physics; Seminars; Three dimensional displays; Quantum dots; density jump; phase transition;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    978-1-4244-6626-9
  • Type

    conf

  • DOI
    10.1109/EDM.2010.5568654
  • Filename
    5568654