Title :
Technological and physical problems of InAs-linear IR Mis-structures array
Author :
Kuryshev, Georgy L.
Author_Institution :
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fDate :
June 30 2010-July 4 2010
Abstract :
Technology and design of linear 1×384 MIS photodetectors on InAs homoepitaxial substrate have been developed. The experimental results on IR linear arrays (IR LA) intended for rapid IR spectrometers with registration time 0.1-50 ms are presented.
Keywords :
MIS structures; indium compounds; infrared spectrometers; photodetectors; IR spectrometers; InAs; MIS photodetectors; homoepitaxial substrate; linear IR MIS-structures array; Anodes; Films; Logic gates; Seminars; Infrared; MIS structure; detectivity; hybrid;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-6626-9
DOI :
10.1109/EDM.2010.5568655
