Title :
Defect Engineering Using Bilayer Structure in Filament-Type RRAM
Author :
Daeseok Lee ; Jiyong Woo ; Euijun Cha ; Sangsu Park ; Sangheon Lee ; Jaesung Park ; Hyunsang Hwang
Author_Institution :
Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
To develop a low-power and stable resistive RAM, a defect engineering using bilayer structure is proposed. To control the amount of defect in switching layer, interfacial state between an oxygen absorption layer and switching layer is used. Therefore, in low-power operation, defect engineered sample demonstrated the proposed approach based on its improved ON/OFF ratio and stability.
Keywords :
absorption; circuit stability; low-power electronics; random-access storage; bilayer structure; circuit stability; defect engineering; filament-type RRAM; improved ON-OFF ratio; interfacial state; low-power RAM; oxygen absorption layer; stable resistive RAM; switching layer; Absorption; Hafnium compounds; Random access memory; Reliability; Resistance; Switches; Bilayer; defect engineering; interface engineering; low-power operation; resistive random access memory (RRAM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2279009
