Title :
A 17W C-band high efficiency high power pHEMT amplifier for space applications
Author :
Lhortolary, J. ; Ouarch, Z. ; Chang, C. ; Camiade, M.
Author_Institution :
United Monolithic Semicond., Orsay, France
Abstract :
A monolithic two stages high efficiency, high power amplifier has been developed for space applications in the 5.2 GHz to 5.6 GHz frequency range. Based on the 0.25 mum UMS power pHEMT technology, this inverse class F power amplifier averages 17 W saturated output power with 45% PAE and 25 dB of gain with a peak performance at 18.7 W and 50% of PAE. These performances have been reached by the combination of the use of very large transistor cells, an efficient design methodology based on rigorous determination of optimized load impedance and the use of accurate transistor model.
Keywords :
high electron mobility transistors; C-band high efficiency; frequency 5.2 GHz to 5.6 GHz; pHEMT amplifier; saturated output power; Design methodology; Design optimization; Frequency; High power amplifiers; Impedance; PHEMTs; Performance gain; Power amplifiers; Power generation; Space technology;
Conference_Titel :
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4749-7
