Title :
MOCVD growth of InAs/GaAs quantum dots and laser diodes
Author :
Stewart, K. ; Tan, H.H. ; Wong-Leong, J. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
This paper discusses the growth of InAs/GaAs quantum dots using MOCVD. Laser diode fabrication using stacked quantum dot structures is also presented.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; photoluminescence; quantum dot lasers; semiconductor growth; semiconductor quantum dots; InAs-GaAs; InAs/GaAs quantum dots; MOCVD growth; laser diode fabrication; laser diodes; photoluminescence spectra; stacked quantum dot structures; Atomic force microscopy; Buffer layers; Diode lasers; Gallium arsenide; MOCVD; Optical materials; Quantum dot lasers; Quantum dots; Temperature; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363183
