Title :
Characteristics of InGaAs quantum dots grown on tensile-strained GaAs1-xPx
Author :
Kim, Nicholas H. ; Ramamurthy, Praveen C. ; Mawsi, L.J. ; Kuech, T.F.
Author_Institution :
Dept. of Electr. Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
This paper reports on the optical and structural properties of In0.5Ga0.5As (nominal composition) quantum dots (QDs)grown on GaAs1-xPx for x=0-0.45. This study demonstrates that the QD ground state emission wavelength can be varied over a span of 100 nm by adjusting the P-content of the barrier layer. Thus, these structures have potential for achieving high performance laser structures in the shorter wavelength (λ < 1 μm) wavelength region.
Keywords :
gallium arsenide; gallium compounds; ground states; indium compounds; quantum dot lasers; semiconductor quantum dots; InGaAs quantum dots; InGaAs-GaAs1-xPx; barrier layer; ground state emission; high performance laser structures; optical properties; structural properties; tensile-strained GaAs1-xPx; Gallium arsenide; Indium gallium arsenide; Land surface temperature; MOCVD; Optical materials; Quantum computing; Quantum dot lasers; Quantum dots; Stationary state; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363184
