Title :
Room-temperature pulsed operation of InGaAsN quantum dot lasers
Author :
Gao, Q. ; Buda, M. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
This study demonstrates the room-temperature pulsed operation of InGaAsN quantum dot laser diodes. Lasing action is exhibited at about 1078 nm from the excited states of the quantum dots at room temperature.
Keywords :
III-V semiconductors; excited states; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; quantum dot lasers; 1078 nm; 20 degC; InGaAsN; InGaAsN lasers; excited states; laser diodes; lasing action; pulsed operation; quantum dot lasers; room-temperature operation; Chemical lasers; Gallium arsenide; Laser theory; Optical materials; Optical pulses; Pulsed laser deposition; Quantum dot lasers; RNA; Temperature; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363185
