High-power InGaAs/InP charge-compensated uni-traveling-carrier balanced photodetector

Author

Li, Ning ; Chen, Hao ; Demiguel, Stephane ; Li, Xiaowei ; Campbell, Joe C. ; Isshiki, Takahiro D. ; Kinsey, Geoffrey S. ; Sudharsansan, Rengarajan

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

1

fYear

2004

fDate

7-11 Nov. 2004

Firstpage

214

Abstract

High-power balanced photodetectors with top-illuminated, charge-compensated UTC photodiodes have been demonstrated. A 10 μm-diameter photodiode balanced pair achieved a bandwidth of 26 GHz, and a large signal saturation current of 15 mA for each photodiode. These devices can be used in high-power and high-frequency analog optical links to improve the link performance.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical links; photodetectors; 10 mum; 15 mA; 26 GHz; InGaAs-InP; InGaAs/InP photodetector; analog optical links; charge-compensated photodetector; charge-compensated photodiodes; high-frequency optical links; high-power balance photodetector; high-power optical links; large signal saturation current; photodiode balanced pair; top-illuminated photodiodes; unitraveling-carrier photodetector; Bandwidth; Frequency; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical noise; Optical saturation; Photodetectors; Photodiodes; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE

Print_ISBN

0-7803-8557-8

Type

conf

DOI

10.1109/LEOS.2004.1363187

Filename

1363187