Thermoelectric power factor in intermetallic semiconductors with MgAgAs type of structure: requirements for highest values and thermal stability achievement

Author

Gorelenko, Yu. ; Romaka, V.A. ; Stadnyk, Yu. ; Melnychenko-Koblyuk, N. ; Romaka, L. ; Tobola, J. ; Fruchart, D.

Author_Institution

Franko Lviv Nat. Univ.

fYear

2006

fDate

6-10 Aug. 2006

Firstpage

720

Lastpage

725

Abstract

A condition of the maximum thermoelectric power factor (Z*) arising in the intermetallic semiconductors with the crystal structure of the MgAgAs type is unambiguously a heavy doping these materials with both the acceptor and/or donor impurities up to the concentrations, when the Fermi level becomes fixed by the mobility edge of one of the bands with the continuous energies (i.e. conduction or valence band)

Keywords

Fermi level; alloys; crystal structure; doping; semiconductor materials; thermal stability; thermoelectric power; Fermi level; carrier mobility edge; crystal structure; doping; impurity concentrations; intermetallic semiconductors; thermal stability achievement; thermoelectric power factor; Conducting materials; Crystalline materials; Intermetallic; Reactive power; Semiconductor device doping; Semiconductor impurities; Semiconductor materials; Thermal factors; Thermal stability; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2006. ICT '06. 25th International Conference on

Conference_Location

Vienna

ISSN

1094-2734

Print_ISBN

1-4244-0811-3

Electronic_ISBN

1094-2734

Type

conf

DOI

10.1109/ICT.2006.331242

Filename

4133394