DocumentCode
2015421
Title
Channel-width dependent hot-carrier degradation of thin-gate pMOSFETs
Author
Lee, Y.-H. ; Wu, K. ; Linton, T. ; Mielke, N. ; Hu, S. ; Wallace, B.
Author_Institution
Intel Corp., Santa Clara, CA, USA
fYear
2000
fDate
2000
Firstpage
77
Lastpage
82
Abstract
Channel width dependent pMOSFET hot-carrier degradation has been observed for a 0.25 μm CMOS technology. A detailed characterization revealed two distinct trapping mechanisms that are unique to both narrow and wide width devices. Device simulations indicate that the electric field difference between the STI edge and channel area is responsible for the channel-width dependent degradation. In addition to data from discrete devices, product burn-in data will also be presented to support the channel-width dependent pMOST degradation mechanism
Keywords
CMOS integrated circuits; MOSFET; electron traps; hot carriers; CMOS technology; channel-width dependence; hot-carrier degradation; product burn-in data; thin-gate pMOSFETs; trapping mechanisms; CMOS technology; Charge carrier processes; Current measurement; Degradation; Educational institutions; Electron traps; Hot carriers; MOSFETs; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-5860-0
Type
conf
DOI
10.1109/RELPHY.2000.843894
Filename
843894
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