DocumentCode
2015478
Title
Etch enhanced low capacitance, large area thin film InGaAs metal-semiconductor-metal photodetectors
Author
Seo, Sang-Woo ; Cha, Cheolung ; Cho, Sang-Yeon ; Huang, Sa ; Jokerst, Nan M. ; Brooke, Martin A. ; Brown, April S.
Author_Institution
Dept. of Electr. & Comput. Eng., Duke Univ., Durham, NC, USA
Volume
1
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
222
Abstract
A significant enhancement of the impulse response and capacitance performance of thin film I-MSMs has been demonstrated through etching, while still preserving the thickness of the absorbing region. Thus, the traditional tradeoff between device output current, as defined by device diameter and absorbing layer thickness and capacitance/speed, has been alleviated through etching enhancement.
Keywords
III-V semiconductors; etching; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; thin film devices; InGaAs; InGaAs photodetectors; absorbing layer thickness; capacitance performance; etch enhanced thin film; etching; impulse response; large area thin film; low capacitance thin film; metal-semiconductor-metal photodetectors; Bonding; Capacitance measurement; Detectors; Etching; Fingers; Indium gallium arsenide; Photodetectors; Plasma measurements; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363191
Filename
1363191
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