DocumentCode
2015485
Title
Observation of multiple domains in a planar Gunn diode
Author
Khalid, A. ; Li, Chong ; Dunn, G. ; Pilgrim, N. ; Cumming, D. S R
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
fYear
2009
fDate
28-29 Sept. 2009
Firstpage
298
Lastpage
300
Abstract
We have observed multiple oscillations in a planar Gunn diode fabricated using an AlGaAs/GaAs based quantum well structure. The material used was grown by molecular beam epitaxy and devices were made using electron beam lithography. The devices had a 4 mum cathode-anode distance and 60 mum width. They showed multiple oscillations at 29 GHz, 33 GHz and 35 GHz. This is the first observation of multiple frequencies in a planar quantum well structure device and may have applications as a single chip multi-frequency source.
Keywords
Gunn diodes; aluminium compounds; gallium arsenide; semiconductor quantum wells; AlGaAs-GaAs; cathode-anode distance; electron beam lithography; frequency 29 GHz; frequency 33 GHz; frequency 35 GHz; molecular beam epitaxy; multiple oscillations; planar Gunn diode; quantum well structure; single chip multifrequency source; Electron beams; Frequency; Gallium arsenide; Gunn devices; HEMTs; Lithography; Molecular beam epitaxial growth; Semiconductor diodes; Voltage; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location
Rome
Print_ISBN
978-1-4244-4749-7
Type
conf
Filename
5296054
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