Hot carrier induced degradation in deep submicron MOSFETs at 100°C

This work demonstrates that V_g=V_d is the worst case stress condition for deep submicron NMOSFETs and PMOSFETs operating at 100°C. Degradation is more severe at 100°C than at room temperature even for supply voltages greater than 2.5 V. The effect of channel length on the substrate current´s temperature-dependence is also examined