DocumentCode
2015586
Title
Hydrogen bonding of low-k materials deposited by ICPCVD
Author
Oh, Taegeun ; Kwang-Man Lee ; Chi Kyu Choi
fYear
2003
fDate
5-5 June 2003
Firstpage
262
Abstract
Summary form only given, as follows. To achieve high-speed integrated circuits, it is required an insulating material with low-k (low dielectric constant). There have been researched various low-k materials such as a-C F, SiOF and methylsilsesquioxane (MSQ). Recently, porous materials such as organosilicate films are studied as low-k materials which films have the organic-morganic hybrid type properties.
Keywords
organic-inorganic hybrid materials; permittivity; plasma CVD; ICPCVD; dielectric constant; high-speed integrated circuits; insulating material; low-k materials; organic-inorganic hybrid type properties; organosilicate films; Atomic measurements; Bonding; Carbon dioxide; Dielectric measurements; Hydrogen; Organic light emitting diodes; Organic materials; Plasma stability; Solid state circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location
Jeju, South Korea
ISSN
0730-9244
Print_ISBN
0-7803-7911-X
Type
conf
DOI
10.1109/PLASMA.2003.1228794
Filename
1228794
Link To Document