Title :
Nucleation of Ge nanoislands on Si by pulsed ion irradiation
Author :
Kuchinskaya, PoHna A. ; Smagina, Zhanna V. ; Zinoviev, Vladimir A. ; Dvurechenskii, Anatoly V.
Author_Institution :
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fDate :
June 30 2010-July 4 2010
Abstract :
The effect of ion beam irradiation on nucleation and growth of three-dimensional (3D) Ge islands on Si (100) substrate was investigated. It was found that pulsed ion-beam action during heteroepitaxy leads to the increase of 3D islands density, decrease of their size and improvement of the size uniformity. To reveal the mechanisms of observed effects Monte Carlo simulation was made. It was shown that the density of 3D islands and their size distribution depend on the ion penetration depth and moment of ion-beam action on the growing surface during Ge/Si heteroepitaxy.
Keywords :
Monte Carlo methods; elemental semiconductors; germanium; ion beam effects; island structure; nanofabrication; nanostructured materials; semiconductor growth; 3D islands density; Ge; Monte Carlo simulation; Si; Si (100) substrate; heteroepitaxy; ion penetration depth; nanoislands; nucleation; pulsed ion beam irradiation; three-dimensional islands; Deformable models; Ions; Lattices; Molecular beam epitaxial growth; Quantum dots; Seminars; Simulation; heteroepitaxy; interstitials; ion irradiation; nanoislands;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-6626-9
DOI :
10.1109/EDM.2010.5568688
