Low temperature DC plasma CVD diamond and diamond-like carbon thin films

Author

Ramos, H.J. ; Malapit, G.M. ; Montecillo, A.

Author_Institution

Coll. of Sci., Univ. of the Philippines, Diliman, Philippines

fYear

2003

fDate

5-5 June 2003

Firstpage

264

Abstract

Summary form only given, as follows. Summary form only given. Diamond and diamond like carbon (DLC) films were deposited on silicon wafer at relatively low substrate temperatures ranging from 175 /spl deg/C to 275 /spl deg/C by dc plasma chemical vapor deposition. Substrates were placed on a molybdenum cap holder enveloped by a controlled heater rated at 200 watts Hydrogen (H/sub 2/) and methane (CH/sub 4/) were used as gas reactants in varying ratios from 1-5% volume CH/sub 4/ in a total gas filling pressure of 10 Torr. Deposition times ranged from 5 to 15 hours. Raman spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy confirmed the produced films. The Raman and XRD results indicating the transition from DLC to diamond film under certain deposition conditions are discussed via a model involving the reaction of hydrogen in the growth process of these films.

Keywords

Raman spectra; X-ray diffraction; diamond; diamond-like carbon; plasma CVD coatings; scanning electron microscopy; 10 torr; 175 to 275 degC; 200 W; 5 to 15 h; C; Raman spectroscopy; X-ray diffraction; diamond film; diamond-like carbon thin films; low temperature DC plasma CVD; scanning electron microscopy; Diamond-like carbon; Hydrogen; Plasma chemistry; Plasma temperature; Semiconductor films; Silicon; Substrates; Temperature distribution; Transistors; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on

Conference_Location

Jeju, South Korea

ISSN

0730-9244

Print_ISBN

0-7803-7911-X

Type

conf

DOI

10.1109/PLASMA.2003.1228799

Filename

1228799