DocumentCode
2015757
Title
All-epitaxial current- and mode-confined AlGaAs/GaAs vertical-cavity surface-emitting laser
Author
Lu, D. ; Ahn, J. ; Deppe, D.G.
Author_Institution
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Volume
1
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
246
Abstract
A new lithographically defined self-aligned index- and current-confined all-epitaxial GaAs-based VCSEL is demonstrated. The new VCSEL is based on epitaxial regrowth, except that it also uses an intracavity phase-shifting mesa to obtain mode-confinement.
Keywords
III-V semiconductors; aluminium compounds; epitaxial growth; gallium arsenide; laser cavity resonators; laser modes; photolithography; semiconductor growth; semiconductor lasers; surface emitting lasers; AlGaAs-GaAs; AlGaAs/GaAs vertical-cavity surface-emitting laser; current confinement; epitaxial regrowth; intracavity phase-shifting mesa; lithography; mode confinement; self-aligned index; Capacitive sensors; Gallium arsenide; Laser modes; Mirrors; Optical control; Optical saturation; Optical scattering; Surface emitting lasers; Thermal resistance; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363203
Filename
1363203
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