Analysis of evolution to and beyond quasi-breakdown in ultra-thin oxide and oxynitride

Author

Okandan, M. ; Fonash, S.J. ; Maiti, B. ; Tseng, H.-H. ; Tobin, P.

Author_Institution

Pennsylvania State Univ., University Park, PA, USA

fYear

2000

fDate

2000

Firstpage

191

Lastpage

193

Abstract

Evolution to quasi-breakdown with constant current stressing, annealing behavior and response to further post-quasi-breakdown stressing are observed in 30 Å (measured by ellipsometry) furnace grown oxide and oxynitride samples. The innate behavior of the dielectrics is clearly demonstrated in the wear-out/failure stage with these measurements and anneals. Devices tested are NMOS transistors with channel width of 15 μm and lengths ranging from 15 to 0.225 μm

Keywords

MOSFET; annealing; dielectric thin films; failure analysis; leakage currents; nitridation; oxidation; semiconductor device breakdown; semiconductor device reliability; 0.225 to 15 mum; 30 angstrom; NMOS transistors; Si-SiO₂; Si-SiON; annealing behavior; channel length; channel width; constant current stressing; dielectrics; ellipsometry; failure stage; furnace grown oxide; gate leakage currents; post-quasi-breakdown stressing; quasi-breakdown; ultra-thin oxide; ultra-thin oxynitride; Annealing; Argon; Breakdown voltage; Charge pumps; Degradation; Dielectric measurements; Electric breakdown; Leakage current; Stress measurement; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-5860-0

Type

conf

DOI

10.1109/RELPHY.2000.843913

Filename

843913