Title :
GaN MMIC amplifiers for W-band transceivers
Author :
Masuda, Satoshi ; Ohki, Toshihiro ; Makiyama, Kozo ; Kanamura, Masahito ; Okamoto, Naoya ; Shigematsu, Hisao ; Imanishi, Kenji ; Kikkawa, Toshihide ; Joshin, Kazukiyo ; Hara, Naoki
Author_Institution :
Fujitsu Ltd., Atsugi, Japan
Abstract :
This paper presents W-band monolithic microwave integrated circuit (MMIC) amplifiers with grounded coplanar waveguide (GCPW) in 0.12 mum GaN HEMT technology. A fabricated four-stage low-noise amplifier (LNA) exhibited a record gain of 23 dB at 76.5 GHz and a first reported noise figure (NF) of 3.8 dB at 80 GHz for any W-band GaN MMIC. Another MMIC power amplifier (PA) delivered an output power of 25.4 dBm at 76.5 GHz with continuous wave (CW) operation. To our knowledge, this is the first demonstration of GaN LNA as well as GaN MMICs with GCPW in the W-band. In addition, a practical design technique to prevent instability of the W-band MMIC is described.
Keywords :
HEMT integrated circuits; MMIC amplifiers; coplanar waveguide components; gallium compounds; low noise amplifiers; millimetre wave power amplifiers; transceivers; GaN; GaN HEMT technology; GaN MMIC amplifier; LNA; MMIC power amplifier; W-band transceiver; continuous wave operation; fabricated four-stage low-noise amplifier; frequency 76.5 GHz; frequency 80 GHz; grounded coplanar waveguide; microwave integrated circuit; size 0.12 mum; Coplanar waveguides; Gallium nitride; HEMTs; Integrated circuit technology; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers; Transceivers;
Conference_Titel :
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4749-7
