Title :
Bias and temperature stress reliability of InGaP/GaAs HBTs
Author :
Rezazadeh, A.A. ; Bashar, S.A. ; Sheng, H. ; Amin, F.A. ; Cattani, L. ; Liou, Juin J.
Author_Institution :
Dept. of Electron. Eng., King´´s Coll., London, UK
Abstract :
The reliability of InGaP/GaAs N-p-n HBTs with different base metal contact systems (Au/Zn/Au, Ti/Au, Ti/Pt/Au and the novel Ti/ZrB2 /Au) under current and temperature stress is studied in this paper. We further report results of current stress on three p-GaAs doping impurities namely Zn, Be- and C. The effect of O+/H + and O+/He+ ions, used in the fabrication of planar self-aligned HBTs, is also investigated in the stability of device dc current gain. The instability phenomena typical of each factor and their effects on the HBT characteristics are reported
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device reliability; DC current gain; InGaP-GaAs; InGaP/GaAs HBT; base metal contact; current bias stress; fabrication; impurity doping; ion bombardment; planar self-aligned device; reliability; stability; temperature stress; Doping; Fabrication; Gallium arsenide; Gold; Helium; Impurities; Stability; Stress; Temperature; Zinc;
Conference_Titel :
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-5860-0
DOI :
10.1109/RELPHY.2000.843923
