Title :
Breakdown and degradation issues and the choice of a safe load line for power HFET operation
Author :
Dieci, D. ; Menozzi, R. ; Tomasi, T. ; Sozzi, G. ; Lanzieri, C. ; Canali, C.
Author_Institution :
Dipt. di Sci., Modena Univ., Italy
Abstract :
This work shows data of hot electron degradation of power AlGaAs/GaAs HFETs and uses them to infer general indications on the bias point dependence of the device degradation, the meaningfulness of the breakdown voltage figure of merit and the physical phenomena taking place in the devices during the stress
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; power field effect transistors; semiconductor device breakdown; semiconductor device reliability; AlGaAs-GaAs; AlGaAs/GaAs power HFET; bias point; breakdown voltage; figure of merit; high field stress; hot electron degradation; load line; reliability; Artificial intelligence; Degradation; Electric breakdown; Electrons; Gallium arsenide; HEMTs; Irrigation; MODFETs; Silicon compounds; Stress;
Conference_Titel :
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-5860-0
DOI :
10.1109/RELPHY.2000.843924
