DocumentCode
2016172
Title
Breakdown and degradation issues and the choice of a safe load line for power HFET operation
Author
Dieci, D. ; Menozzi, R. ; Tomasi, T. ; Sozzi, G. ; Lanzieri, C. ; Canali, C.
Author_Institution
Dipt. di Sci., Modena Univ., Italy
fYear
2000
fDate
2000
Firstpage
258
Lastpage
263
Abstract
This work shows data of hot electron degradation of power AlGaAs/GaAs HFETs and uses them to infer general indications on the bias point dependence of the device degradation, the meaningfulness of the breakdown voltage figure of merit and the physical phenomena taking place in the devices during the stress
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; power field effect transistors; semiconductor device breakdown; semiconductor device reliability; AlGaAs-GaAs; AlGaAs/GaAs power HFET; bias point; breakdown voltage; figure of merit; high field stress; hot electron degradation; load line; reliability; Artificial intelligence; Degradation; Electric breakdown; Electrons; Gallium arsenide; HEMTs; Irrigation; MODFETs; Silicon compounds; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-5860-0
Type
conf
DOI
10.1109/RELPHY.2000.843924
Filename
843924
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