Title :
InGaN-based light-emitting diode with undercut-side wall
Author :
Kao, Chih-Chiang ; Chu, J.T. ; Huang, H.W. ; Peng, Y.C. ; Yu, C.C. ; Hseih, Y.L. ; Lin, C.F. ; Kuo, H.C. ; Wang, S.C.
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The experimental results of the fabricated LEDs with ∼22° undercut side walls are reported and the performance of the fabricated undercut side wall LEDs show ∼70 % enhancement in the light output. Nitride-based LEDs were achieved by controllable inductively coupled plasma reactive ion etching (ICP-RIE).
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; sputter etching; wide band gap semiconductors; InGaN-based light-emitting diode; inductively coupled plasma reactive ion etching; undercut-side wall; Automotive engineering; Brightness; Computer displays; Etching; Gallium nitride; Gold; Light emitting diodes; Optical materials; Quantum well devices; Scanning electron microscopy;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363223
