• DocumentCode
    2016208
  • Title

    InGaN-based light-emitting diode with undercut-side wall

  • Author

    Kao, Chih-Chiang ; Chu, J.T. ; Huang, H.W. ; Peng, Y.C. ; Yu, C.C. ; Hseih, Y.L. ; Lin, C.F. ; Kuo, H.C. ; Wang, S.C.

  • Author_Institution
    Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    1
  • fYear
    2004
  • fDate
    7-11 Nov. 2004
  • Firstpage
    286
  • Abstract
    The experimental results of the fabricated LEDs with ∼22° undercut side walls are reported and the performance of the fabricated undercut side wall LEDs show ∼70 % enhancement in the light output. Nitride-based LEDs were achieved by controllable inductively coupled plasma reactive ion etching (ICP-RIE).
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; sputter etching; wide band gap semiconductors; InGaN-based light-emitting diode; inductively coupled plasma reactive ion etching; undercut-side wall; Automotive engineering; Brightness; Computer displays; Etching; Gallium nitride; Gold; Light emitting diodes; Optical materials; Quantum well devices; Scanning electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-8557-8
  • Type

    conf

  • DOI
    10.1109/LEOS.2004.1363223
  • Filename
    1363223
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2016208