Title :
Fabrication of InGaN multi-quantum-well nanorod by Ni nano-mask
Author :
Huang, Hung-Wen ; Tao-Hung Hsueh ; Kao, Chih-Chiang ; Chang, Ya-Hsien ; Ou-Yang, Miaochia ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this article, a novel method to fabricate high-density InGaN/GaN MQW nanorods by ICP-RIE dry etching technique using self-assembled nickel (Ni) nano-masks is reported.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; masks; nanolithography; nickel; photolithography; self-assembly; semiconductor quantum wells; sputter etching; wide band gap semiconductors; ICP-RIE dry etching; InGaN; InGaN multiquantum-well nanorod; Ni; self-assembled nickel nanomasks; Chemical vapor deposition; Dry etching; Fabrication; Gallium nitride; Nanoscale devices; Nickel; Quantum well devices; Scanning electron microscopy; Self-assembly; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363224
