Intermixing effects on emission properties of InGaN/GaN coupled Quantum wells

Author

Susilo, Tri B. ; Alsunaidi, M.A. ; Chao Shen ; Ooi, Boon S.

Author_Institution

Dept. of Electr. Eng., King Fahd Univ. of Pet. & Miner., Dhahran, Saudi Arabia

fYear

2015

fDate

1-4 Feb. 2015

Firstpage

1

Lastpage

4

Abstract

Intermixing processes in quantum wells have been extensively studied in order to modify characteristic of semiconductor devices such as LEDs. Controlling the band gap of material by introducing intermixing process can be used to enable broadband and controllable emission of LEDs. Quantum well intermixing (QWI) in InGaN/GaN double quantum well (DQW) is discussed in this paper. By varying the interdiffusion and separation lengths, the effects of intermixing process on the quantum eigen energies of the wells are studied. The investigation is carried out using a homegrown Quantum-FDTD simulator.

Keywords

III-V semiconductors; energy gap; finite difference time-domain analysis; gallium compounds; indium compounds; light emitting diodes; quantum well devices; wide band gap semiconductors; DQW; InGaN-GaN; LED; QWI; band gap; double quantum well; emission properties; intermixing processes; quantum eigen energies; quantum well intermixing; quantum-FDTD simulator; semiconductor devices; Annealing; Equations; Gallium nitride; Indium; Light emitting diodes; Mathematical model; Photonic band gap; Interdiffusion; LEDs; QFDTD; Quantum Well Intermixing (QWI);

fLanguage

English

Publisher

ieee

Conference_Titel

GCC Conference and Exhibition (GCCCE), 2015 IEEE 8th

Conference_Location

Muscat

Type

conf

DOI

10.1109/IEEEGCC.2015.7060090

Filename

7060090