Title :
A 60-GHz RF IQ DAC transceiver with on-die at-speed loopback
Author :
Laskin, E. ; Tomkins, A. ; Balteanu, A. ; Sarkas, I. ; Voinigescu, S.P.
Author_Institution :
ECE Dept., Univ. of Toronto, Toronto, ON, Canada
Abstract :
A radio transceiver with direct 5.3-Gb/s carrier modulation using a 60-GHz 2-bit IQ DAC, a zero-IF IQ receiver, a PLL with a single- 60-GHz VCO and an integrated crystal oscillator, was designed and fabricated in a 130-nm SiGe BiCMOS technology. It covers the entire 57-66 GHz band with digitally-programmable 0-to-10 dBm output power and -15 to 60 dB receiver gain, and 5 dB noise figure. Depending on the receive-path gain, the IP1 varies between -55 dBm and 0 dBm. The chip consumes 350mW/225mW in TX/RX mode.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; digital-analogue conversion; field effect MIMIC; millimetre wave oscillators; phase locked loops; radio transceivers; radiofrequency integrated circuits; voltage-controlled oscillators; BiCMOS technology; PLL; RF IQ DAC transceiver; SiGe; TX/RX mode; VCO; direct carrier modulation; frequency 57 GHz to 66 GHz; integrated crystal oscillator; millimeter wave oscillator; noise figure 5 dB; radio transceiver; size 130 nm; zero-IF IQ receiver; Crystals; Gain; Modulation; Phase locked loops; Receivers; Switches; Transceivers; 60-GHz radio; PLL; RF DAC; SiGe BiCMOS; VCO; antenna switch; package;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-8293-1
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2011.5940601
