A 60dB gain and 4dB noise figure CMOS V-band receiver based on two-dimensional passive Gm-enhancement

Author

Wang, Ning-Yi ; Wu, Hao ; Liu, Jenny Yi-Chun ; Lu, Jianhua ; Hsieh, Hsieh-Hung ; Wu, Po-Yi ; Jou, Chewnpu ; Chang, Mau-Chung Frank

Author_Institution

Univ. of California, Los Angeles, CA, USA

fYear

2011

fDate

5-7 June 2011

Firstpage

1

Lastpage

4

Abstract

A direct conversion receiver which consists of low noise amplifier (LNA), mixer and programmable gain amplifier (PGA) for V-band (60GHz) applications is designed and realized in 65nm CMOS. A novel two-dimensional passive g_m-enhancement technique is devised to boost the conversion gain and lower the Noise Figure (NF) with insignificant power overhead. An overall minimum SSB NF of 3.9dB and a maximum power conversion gain of 60dB have been validated from such fabricated receiver that occupies core silicon area of 0.2mm² and draws 34mA from 1V supply.

Keywords

CMOS integrated circuits; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; millimetre wave mixers; millimetre wave receivers; CMOS V-band receiver; current 34 mA; direct conversion receiver; frequency 60 GHz; gain 60 dB; low noise amplifier; mixer; noise figure 4 dB; programmable gain amplifier; size 65 nm; two-dimensional passive Gm-enhancement; voltage 1 V; CMOS integrated circuits; Coils; Electronics packaging; Gain; Noise; Noise measurement; Receivers; 60GHz; CMOS integrated receiver; V-band; low-noise high-gain amplifier; mixer; transformer; two-dimensional gm-enhancement;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE

Conference_Location

Baltimore, MD

ISSN

1529-2517

Print_ISBN

978-1-4244-8293-1

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2011.5940603

Filename

5940603