DocumentCode
2016299
Title
Temperature and bias characteristics of p-i-n optical modulators for free-space optical communications
Author
Onat, Bora M. ; Masaun, Navneet ; Martin, Tara ; Dries, J.C.
Author_Institution
Sensors Unlimited, Inc., Princeton, NJ, USA
Volume
1
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
294
Abstract
Operational characteristics of InGaAs/InAlAs based MQW modulators, with different device designs, for a wide temperature range (-40°C to 70°C) are reported. The modulator peak extinction ratio wavelength is shown to be a linear function of temperature.
Keywords
III-V semiconductors; aluminium compounds; electro-optical effects; gallium arsenide; indium compounds; optical communication equipment; optical design techniques; optical modulation; p-i-n photodiodes; semiconductor quantum wells; thermo-optical effects; InGaAs-InAlAs; InGaAs/InAlAs based MQW modulators; device design; free-space optical communications; modulator peak extinction ratio wavelength; p-i-n optical modulators; Dark current; Doped fiber amplifiers; Etching; Gold; Indium gallium arsenide; Optical modulation; Optical sensors; PIN photodiodes; Plasma temperature; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363227
Filename
1363227
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