Title :
A WiMedia UWB transmitter up to 9GHz in 65nm CMOS and Wafer-Level Fabricated Package
Author :
Yim, Jounghyun ; Kang, Byoungjoong ; Kim, Taewan ; Ko, Won ; Shin, Heeseon ; Ko, Sangsoo ; Ryu, Inhyo ; Yang, Sung-Gi ; Bae, Jong-Dae ; Park, Hojin
Author_Institution :
SAMSUNG Electron. Co., Ltd., Yongin, South Korea
Abstract :
A 3.1-4.7GHz and 6.3-9GHz RF transmitter fabricated in a 65nm CMOS technology and packaged with a Wafer-level Fabricated Package (WFP) is presented. For high frequency and wideband performances, all the effects of package are considered and loopback paths with a power detector are implemented. A new structure of T/R switch is devised for the low noise performance of Rx and the high linearity of Tx. With these circuits, the transmitter features high linearity, low power consumption and small chip area meeting all the WiMedia PHY spec.
Keywords :
CMOS integrated circuits; field effect MMIC; low-power electronics; microwave receivers; radio transmitters; ultra wideband communication; wafer level packaging; CMOS technology; RF transmitter; WiMedia PHY spec; WiMedia UWB transmitter; frequency 3.1 GHz to 4.7 GHz; frequency 6.3 GHz to 9 GHz; frequency 9 GHz; low power consumption; power detector; size 65 nm; wafer-level fabricated package; CMOS integrated circuits; Calibration; Impedance matching; Mixers; Radio frequency; Switches; Transmitters; CMOS; Loopback; MB-OFDM; RF Transmitter; Switch; UWB;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-8293-1
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2011.5940610
