DocumentCode
2016656
Title
A model for evaluating cumulative oxide damage from multiple plasma processes
Author
Noguchi, Ko ; Matsumoto, Akira ; Oda, Noriaki
Author_Institution
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
fYear
2000
fDate
2000
Firstpage
364
Lastpage
369
Abstract
This paper reports a model for evaluating the cumulative oxide damage caused by multiple plasma processes. By considering dependence of the charging current on the antenna size, the damage to a MOS device with various antenna configurations is evaluated, and is compared with the measured data. It is shown that the plasma charging current is a sub-linear function of the antenna size. Because of this characteristic, cumulative oxide damage becomes smaller than a simple sum when the antenna is shared among multiple layers of antenna conductors. A modified antenna rule is proposed, and a realistic antenna design guideline is obtained
Keywords
MOSFET; failure analysis; plasma materials processing; semiconductor device reliability; semiconductor process modelling; surface treatment; MOS device; antenna design guideline; antenna size; charging current; cumulative oxide damage; modified antenna rule; multiple layers; multiple plasma processes; plasma charging current; Circuits; Conductors; MOS devices; National electric code; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-5860-0
Type
conf
DOI
10.1109/RELPHY.2000.843941
Filename
843941
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