• DocumentCode
    2016656
  • Title

    A model for evaluating cumulative oxide damage from multiple plasma processes

  • Author

    Noguchi, Ko ; Matsumoto, Akira ; Oda, Noriaki

  • Author_Institution
    ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    364
  • Lastpage
    369
  • Abstract
    This paper reports a model for evaluating the cumulative oxide damage caused by multiple plasma processes. By considering dependence of the charging current on the antenna size, the damage to a MOS device with various antenna configurations is evaluated, and is compared with the measured data. It is shown that the plasma charging current is a sub-linear function of the antenna size. Because of this characteristic, cumulative oxide damage becomes smaller than a simple sum when the antenna is shared among multiple layers of antenna conductors. A modified antenna rule is proposed, and a realistic antenna design guideline is obtained
  • Keywords
    MOSFET; failure analysis; plasma materials processing; semiconductor device reliability; semiconductor process modelling; surface treatment; MOS device; antenna design guideline; antenna size; charging current; cumulative oxide damage; modified antenna rule; multiple layers; multiple plasma processes; plasma charging current; Circuits; Conductors; MOS devices; National electric code; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-5860-0
  • Type

    conf

  • DOI
    10.1109/RELPHY.2000.843941
  • Filename
    843941